IRF200P222 MOSFET IFX OPTIMOS

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Name: IRF200P222 MOSFET IFX OPTIMOS
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : IRF200P222

MOQ : 400

Price : Negotiabie

Payment Terms : T/T

Packaging Details : Carton packging

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 200 V

Id - Continuous Drain Current : 182 A

Rds On - Drain-Source Resistance : 6.6 mOhms

Vgs - Gate-Source Voltage : - 20 V, + 20 V

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MOSFET IFX OPTIMOS

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	182 A
Rds On - Drain-Source Resistance:	6.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	203 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	556 W
Channel Mode:	Enhancement
Tradename:	StrongIRFET
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	97 ns
Forward Transconductance - Min:	142 S
Product Type:	MOSFET
Rise Time:	96 ns
	400

IRF200P222 MOSFET IFX OPTIMOS Images

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