BSS123LT1G N Channel MOSFE Enhanced FET 100V 170mA Silkscreen Patch

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Brand Name : ON

Model Number : BSS123LT1G

Place of Origin : ON

MOQ : 1

Price : Can discuss

Payment Terms : T/T

Supply Ability : 3000

Packaging Details : The cartons

Manufacturer : onsemi

Product Category : MOSFET

Technology : Si

Mounting Style : SMD/SMT

Package / Case : SOT-23-3

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 100 V

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Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	170 mA
Rds On - Drain-Source Resistance:	6 Ohms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	-
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	225 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Forward Transconductance - Min:	80 mS
Height:	0.94 mm
Length:	2.9 mm
Product:	MOSFET Small Signal
Product Type:	MOSFET
Series:	BSS123L
	30000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	20 ns
Width:	1.3 mm
Unit Weight:	0.000282 oz

BSS123LT1G N Channel MOSFE